壁面特性对径向三重流MOCVD反应器壁面温度分布的影响  

Influence of Wall Properties on Wall Temperature of a Radial Flow MOCVD Reactor with Three Separate Vertical Inlets

作　　者：刘勇[1] 聂宇宏[1] 姚寿广[1] 

机构地区：[1]江苏科技大学机械与动力工程学院,镇江212003

出　　处：《Journal of Semiconductors》2007年第6期913-917,共5页半导体学报（英文版）

基　　金：江苏省教育厅高校自然科学指导性计划基金资助项目(批准号:03KJD140022)

摘　　要：分别采用透明体模型、黑体模型、灰体模型、三谱带漫反射模型、三谱带镜反射模型和二谱带模型对石英壁面的辐射特性进行模拟,并结合求解辐射传递方程的谱带区域法模型,计算了不同壁面特性下径向三重流MOCVD反应器的壁面温度分布.结果表明,不同的壁面特性模型对MOCVD壁面温度的分布有较大影响,其中壁面发射率的影响最大,而透射率的影响较小;在反应器的不同部位,壁面特性模型对温度分布影响的规律不同.Quartz is widely used as the wall of MOCVD reactors. We compared numerical simulations performed by six differ-ent models of the quartz emissivity, transmissivity and reflectivity. The models include the transparent-body model, a black body model,a gray body model, a three-band specular reflective model, a three-band diffusive reflective model, and a two-band model. These models are combined with the zone method to simulate wall temperature distribution in the MOCVD reac-tor with three separate vertical inlets. Results show that the temperature distributions of a quartz wall are largely influenced by the wall properties,in which the wall emissivity is the largest,and the wall transmissivity is the smallest. The rule of wall temperature distributions differs for different walls,

关 键 词：MOCVD 石英 辐射特性 壁面温度 影响 

分 类 号：TN304.05[电子电信—物理电子学]