Effect of substrate porosity on photoluminescence properties of ZnS films prepared on porous Si substrates by pulsed laser deposition  

作　　者：WANG Cai-feng LI Qing-shan ZHANG Li-chun LV Lei QI Hong-xia 

机构地区：[1]College of Physics and Engineering, Qufu Normal University, Qufu 273165, China [2]Ludong University, Yantai 264025, China

出　　处：《Optoelectronics Letters》2007年第3期169-172,共4页光电子快报（英文版）

基　　金：This work was supported by the Natural Science Foundation ofShandong Province (Grant No.Y2002A09)

摘　　要：ZnS films were deposited on porous Si(PS) substrates with different porosities by pulsed laser deposition. The photolumi-nescence spectra of the samples were measured to study the effect of substrate porosity on luminescence properties of ZnS/porous Si composites. After deposition of ZnS films,the red photoluminescence peak of porous Si shows a slight blueshift compared with as-prepared porous Si samples. With an increase of the porosity,a green emission at about 550 nm was observed which may be ascribed to the defect-center luminescence of ZnS films,and the photoluminescence of ZnS/porous Si composites is very close to white light. Good crystal structures of the samples were observed by x-ray diffraction,showing that ZnS films were grown in preferred orientation. Due to the roughness of porous Si surface,some cracks appear in ZnS films,which could be seen from scanning electron microscope images.

关 键 词：衬底孔隙度 ZNS薄膜 光致发光 多孔硅衬底 脉冲激光沉积 

分 类 号：TN383.2[电子电信—物理电子学]