半导体湿法腐蚀中溶液的红外热像分布及变化特性  

The Distribution of Solution Infrared Image and Its Mutative Characteristic in the Processing of Semiconductor Wet Etching

作　　者：罗颖[1] 叶玉堂[1] 刘霖[1] 陈镇龙[1] 田骁[1] 王昱琳[1] 

机构地区：[1]电子科技大学光电信息学院,四川成都610054

出　　处：《激光与红外》2007年第6期524-526,共3页Laser & Infrared

基　　金：国家自然科学基金(No.60277008);教育部重点项目(No.03147);国防科技重点实验室基金项目(No.514910501005DZ0201);四川省科技厅资助课题(No.04GG021-020-01)

摘　　要：提出了半导体湿法腐蚀中溶液热分布及其变化特性的红外热像分析方法。该方法的实质是湿法腐蚀中伴随着热量的生成与腐蚀液的热对流,利用红外热像分布图可以有效地显示该特征。实验结果表明:在半导体腐蚀过程中,化学热以半导体材料为中心,向四周梯度状对流;向上的热对流速率明显大于水平的热对流速率;红外热像仪可以实时纪录热对流过程,并获得任意时刻、任意小区域的热对流情况,使得对湿法腐蚀过程中热对流特性的分析和理解更加直观。该方法的引入对半导体腐蚀过程中温度精确控制、腐蚀性能提高有重要的价值。Infrared image analytic method is put forth aiming at the thermal distribution of solution and its mutative characteristic in the processing of semiconductor wet etching. As heat is generated and heat convection simultaneously takes place in etching solution during the processing of wet etching, the thermal characteristic could be analyzed effectively with the distribution of infrared image. Experiment results show as follows ： in the processing of semiconductor etching, chemical heat centers in the semiconductor material, and is convected gradiently in all directions; the vertical heat convection velocity is obviously swifter than the horizontal; the process of heat convection can be real-timely recorded, and the heat convection situation can be gotten in any small area at any time by infrared camera which makes the analyse and understanding of heat convection characteristic in the processing of wet etching more intuitionistic. This method is valued in precisely controlling the temperature and improving the etching performance in the processing of semiconductor etching.

关 键 词：湿法腐蚀 红外热像 热对流 

分 类 号：TN219[电子电信—物理电子学] TN305.7