硅基半导体中埋置硅量子点的低温生长与发光研究  

Low Temperature Growth and Luminescence Study of Silicon Based Compound Films with Silicon Quantum Dots Embedded

作　　者：黄娆[1] 马利波[1] 

机构地区：[1]中国科学院物理研究所,北京100080

出　　处：《山西大学学报（自然科学版）》2007年第2期193-200,共8页Journal of Shanxi University(Natural Science Edition)

基　　金：国家自然科学基金(10404034;10574147;50472070;60021403);国家"863"计划(2003AA302170)

摘　　要：在硅基半导体中埋置的硅量子点因量子限域效应而具有光致发光的性能,是一种实现硅基光电集成很有前途的材料.文章介绍了此类复合薄膜的可控生长,并对其发光进行了研究.Photoluminescence can be obtained from silicon based on the compound films with silicon quantum dots embedded due to quantum confinement effect. The low temperature growth and luminescence study of such films were introduced. Our as-deposited films exhibited high efficiency photoluminescence and extremely short lifetime.

关 键 词：硅 量子点 光致发光 量子限域效应 

分 类 号：O472[理学—半导体物理]