Forouhi-Bloomer离散方程在低k材料光学表征上的应用  

Optical Characterizations of Low-k Materials Using Forouhi-Bloomer Dispersion Equations

作　　者：吴恩超[1] 江素华[1] 胡琳琳 张卫[3] 李越生[1] 

机构地区：[1]复旦大学材料科学系国家微分析中心,上海200433 [2]美国n&k科技有限公司,加利弗尼亚美国95054 [3]复旦大学微电子系,上海200433

出　　处：《半导体技术》2007年第6期508-511,519,共5页Semiconductor Technology

摘　　要：半导体工艺中对低k介质材料的精确表征是工艺监控的重要环节,传统方法如扫描电子显微镜和透射电子显微镜存在耗时长和破坏性等缺点。使用一种结合了Forouhi-Bloomer离散方程组和宽光谱分光光度法的新方法,对低k薄膜进行光学表征,得到薄膜的折射率n、消光系数k和膜厚d,并将结果与椭偏仪的测量进行比较,证明了使用F-B方程在半导体工艺中精确表征低k材料的能力和这种方法快速无损的优点。Accurate characterizations of low- k materials are very important in semiconductor manufacturing process. Traditional methods, such as scanning electron microscopy （SEM） and transmission electron microscopy （TEM） are both time-consuming and destructive. A new characterization technology on thin film was introduced to improve these disadvantages.. Forouhi-Bloomer dispersion equations, combined with a broadband spectrophotometry, were used to measure the refractive index n, the extinction coefficient k and the thickness d of low-k films. Ellipsometer measurement was made for comparison. The results demonstrate that F-B equations are fitful to the accurate characterizations of low-k materials in semiconductor process and have advantages for the speed of measurement and nondestructive nature.

关 键 词：低K材料 Forouhi-Bloomer离散方程 折射率 

分 类 号：TN304[电子电信—物理电子学]