双势垒中类氢杂质位置变化对量子隧穿的影响  

Influence of the Position Variation of a Hydrogen Impurity in a Double-barrier Potential on Quantum Tunneling

作　　者：武维[1] 班士良[1] 贾秀敏[1] 

机构地区：[1]内蒙古大学理工学院物理系,呼和浩特010021

出　　处：《内蒙古大学学报（自然科学版）》2007年第3期267-271,共5页Journal of Inner Mongolia University：Natural Science Edition

基　　金：国家自然科学基金项目(60566002);内蒙古自治区优秀学科带头人资助项目

摘　　要：运用求解任意势中波函数和转移矩阵方法相结合的方法,讨论双势垒结构中类氢杂质位置变化对电子共振隧穿的影响,计算得到电子的共振能级、波函数、透射系数.结果表明:杂质会使双势垒结构的有效势阱加深,从而使得电子的共振能量向低能区移动.电子在势阱中的平均位置越靠近杂质中心所在的位置,相应的有效势阱越深,使得共振峰的能量越低.类氢杂质在势阱中央时,处于第一激发态的电子共振能量最高,而处于第二激发态的电子共振能量最低.The influence of the position variation of a hydrogen impurity in a double-barrier potential on quantum tunneling is discussed by using a combination of a transfer matrix procedure and a method of solving wave functions for arbitrary potentials. The electronic resonance energy levels, wave functions and transmission coefficients are presented. The results show that the impurity may deepen the effective well and causes the resonance peaks moving towards the lower energy region. The closer the average position of the electron in the well to the position of the impurity is, and the deeper the effective potential well is, the lower the resonance energies are. As the hydrogen impurity locates in the center of the well, the resonance energy is highest for an electron at the first excited state, while that is lowest for an electron at the second excited state.

关 键 词：共振隧穿 类氢杂质 透射系数 

分 类 号：O471.3[理学—半导体物理]