RF等离子体CVD合成氮化碳薄膜的XPS研究  

The Application Research on Ferromagnetic Fluid Lineal Seal

作　　者：吴大维[1,2] 张志宏[1,2] 范湘军[1,2] 郭怀喜 孟宪权[1,2] 王国梅 

机构地区：[1]武汉大学物理系 [2]武汉工业大学

出　　处：《功能材料》1997年第1期93-95,共3页Journal of Functional Materials

基　　金：国家自然科学基金

摘　　要：采用射频等离子体化学气相沉积技术合成氮化碳薄膜，测量其Ｘ射线光电子能谱（ＸＰＳ），获得两组Ｃ（１ｓ）电子和Ｎ（１ｓ）电子结合能，它们是Ｅ（Ｃ１）＝３９８．０～３９８．７ｅＶ，Ｅ（Ｃ２）＝２８４．６～２８４．８ｅＶ；Ｅ（Ｎ１）＝３９８．０～３９８．７ｅＶ，Ｅ（Ｎ２）＝４００．０～４００．９ｅＶ。证实了薄膜中碳原子存在ｓｐ３杂化轨道成键和ｓｐ２杂化轨道成键两种键合形式。该方法合成的氮化碳薄膜含氮量在１２．０～５３．７％，含氮量随沉积时氮气流量的增大而增大。The carbon nitride films have been deposited by RF CVD and investigated with X ray photoelectron spectroscopy. The result indicates that there are two couples of binding energies for C (1s) and N(1s). It is suggested that carbon atoms are bonded to nitrogen atoms with sp 2 and sp 3 structures. The N content of the films prepared by RF CVD is in the range of 12.0～53.7%,and rises with the increase of N 2 flow rate during the depositing.

关 键 词：氮化碳 XPS 薄膜 超硬材料 

分 类 号：O484.4[理学—固体物理]