神经MOS晶体管在A/D和D/A转换器中的应用  

Design of A/D and D/A Converters Using Neuron MOS Transistor

作　　者：杨洲[1] 何怡刚[1] 

机构地区：[1]湖南大学电气与信息工程学院,湖南长沙410082

出　　处：《现代电子技术》2007年第10期1-3,共3页Modern Electronics Technique

基　　金：国家自然科学基金(50677014);高校博士点(20060532016);湖南省自然科学基金(06JJ2024);教育部新世纪优秀人才支持计划(NCET-04-0767)

摘　　要：神经MOS晶体管是一种具有多输入栅加权信号控制和阈值可调控的高功能度的新型器件。以神经MOS晶体管的Pspice宏模型为模拟和验证的工具,讨论了基于这种器件的A/D和D/A转换器的设计思想和方法,证明了他能很大程度地减少晶体管数目,简化电路,对实现高密度集成的ULSI系统的设计和实现有重要意义。The neuron MOS transistor is a recently discovered device which is capable of executing a weighted sum calculation of muhiph input signals and threshold operation based on the result of summation. In this paper,A/D and D/A converters realized by using neuron MOS transistor is discussed. This approach is based on a new macro model of neuron MOS transistor, which is used as means of design and verification. It is verified that a dramatic reduction in the number of transistors as well as in the complexity of interconnections has been achieved by using neuron MOS transistor.

关 键 词：神经MOS晶体管 宏模型 A/D D/A 

分 类 号：TN710.2[电子电信—电路与系统]