BN-303光刻胶前烘工艺对MEMS三维结构的影响  

Effect of Soft-baking of BN-303 Photo-resist on 3D Structure of MEMS in Micro-fabrication

作　　者：蒋玉荣[1] 何永[1] 李志伟[1] 周建[1] 欧阳世翕[1] 

机构地区：[1]武汉理工大学材料复合新技术国家重点实验室,武汉430070

出　　处：《武汉理工大学学报》2007年第5期5-6,37,共3页Journal of Wuhan University of Technology

基　　金：教育部科技重点项目(104136)

摘　　要：利用传统紫外光曝光方式,通过扫描电镜观察了刻蚀后样品的表面形貌,定性地讨论前烘工艺对MEMS三维结构的影响。得到优化的工艺为:在对氧化后的硅片进行标准清洗,烘箱温度200℃活化表面30 min。涂胶旋转速度600 r/min,旋转15 s,曝光时间为17 s的条件下,最佳前烘温度为80℃,时间为30 min。研究结果为微器件的制造提供了一些可靠的工艺参数。This paper was the experimental research of photographic progress on BN-303 photo-resist, in which the ultraviolet light was used in exposure, The surface morphology was observed with SEM. It was discussed that the effect of soft-baking on 3D structure of MEMS, qualitatively. Finally, the optimized technical parameters obtained through experiments were as follows： Soft-baking time was 80 ℃and soaking time was 30 min, under the condition of cleaning oxidized silicon mask with standard methods, activating sample surface for 30 min at drying temperature 200℃, coating photo-resist at 6 000 r/min of rotating speed for 15 s with 17 s of exposure time. The above research results might provide some reliable technical parameters for fabricating micro-device.

关 键 词：光刻 BN-303光刻胶 前烘 显影 

分 类 号：TN405[电子电信—微电子学与固体电子学]