Sol-Gel法制备BST铁电薄膜及性能研究  

Research on the Preparation of BST Ferroelectric Thin Films by Sol-gel and Its Properties

作　　者：王国强[1] 王安福[1] 王绍明[1] 

机构地区：[1]郧阳师范高等专科学校物理系,丹江口442700

出　　处：《武汉理工大学学报》2007年第5期10-12,52,共4页Journal of Wuhan University of Technology

基　　金：湖北省教育厅科学技术研究项目(D200560005)

摘　　要：采用溶胶-凝胶法在LaNiO3基底上制备了Ba0.5Sr0.5TiO3(BST)铁电薄膜。研究了不同退火温度对薄膜结晶性能的影响,并测试了各种BST薄膜的介电性能、铁电性能。实验结果表明经700℃退火处理的BST铁电薄膜具有比较优越的电性能,在测试频率为1 kHz时,700℃退火的BST薄膜的介电常数为384.1,介电损耗为0.018 6,在室温下外加偏压为1 V时,700℃退火的BST薄膜漏电流密度达到6.7×10-8A/cm2,其剩余极化强度和矫顽场分别为4.85μC/cm2和65.2 kV/cm。On the substrates of LaNiO3, Ba0.5Sr0.5TiO3（BST）was prepared by Sol-Gel. The study was made on the influence of different annealing temperature on the crystallization properties of thin films and the test was also made on the dielectric Properties and ferroelectric Properties of BST. The results showed that BST ferroelectric thin film under the treatment of 700℃ annealing temperature was characterized by comparatively superior properties and the intensity of its remnant polarization was 4.85 μC/cm^2 and its coercive field value was 65.2 kV/cm. While testing under the condition of I kHz frequency, the dielectric constant of BST thin films under the 700 ℃ annealing temperature was 384.1 and the dielectric loss was 0. 0186. Under the room temperature with the extra addition of I V side force, the leakage current density of BST thin films under the 700 ℃ annealing temperature reached access to 6. 7 × 10^-8 A/cm^2.

关 键 词：钛酸锶钡 铁电薄膜 介电性能 铁电性能 溶胶-凝胶 

分 类 号：TN384[电子电信—物理电子学]