WO_3气敏薄膜的膜厚对气体响应时间的影响  

Effect of thickness of WO_3 gas sensing thin film on gas response time

作　　者：尹英哲[1] 胡明[1] 冯有才[1] 

机构地区：[1]天津大学电子信息工程学院

出　　处：《传感器与微系统》2007年第6期12-14,共3页Transducer and Microsystem Technologies

摘　　要：用简单的模型分析了薄膜气体传感器敏感材料的膜厚对气体响应时间的影响,该模型适用于分析WO3薄膜气体传感器的敏感特性。薄膜气体传感器的敏感特性依赖于气体原子在薄膜内的扩散和与气敏材料的响应;而气体原子在薄膜内的扩散是由薄膜厚度决定的。经过推导得出理论上WO3薄膜对NH3的敏感特性,并将其与实验所得的数据进行比较。最后,给出了WO3薄膜气体传感器的气敏特性与气体在其膜内扩散和膜厚的关系。Effect of film thickness on the gas response time of thin-film-type gas sensor has been analyzed by deriving an equation from a simple modal, and the equation is applied to the sensing behavior of WO3 thin film sensor. It is revealed ,from the equation,that the gas sensing property is closely related to gas diffusivity into the film which is a function of film thickness, reactivity of the gas detected with sensing material, operating temperature, etc. The equation derived is well consistent with the experimental results from WO3 thin film sensors and explained their different NH3 sensing behaviors. Finally, a model is suggested, explaining the effect of gas sensing behavior of oxide semiconductor sensor.

关 键 词：WO3薄膜 响应时间 气体传感器 

分 类 号：TN304.92[电子电信—物理电子学]