常压下MOCVD法制备Al_2O_3薄膜工艺的研究  

Study on the Preparation of Al_2O_3 Film by MOCVD Under Normal Atmosphere

作　　者：罗小秋[1] 温吉利[1] 刘炯 孙启凤[1] 

机构地区：[1]华东理工大学化工机械研究所,上海200237 [2]江西省锅炉压力容器检验检测研究院九江分院,江西九江332000

出　　处：《中国表面工程》2007年第3期47-50,共4页China Surface Engineering

摘　　要：在常压条件下,采用金属有机化学气相沉积(MOCVD)系统在Fe-Cr-Ni合金基片上沉积Al2O3薄膜。以仲丁醇铝(ASB)为原料,纯氮为载气,研究基片温度、ASB温度和载气流量对沉积速率的影响。采用EDS、SEM技术对Al2O3薄膜的组成进行分析。研究表明,ABS温度为125℃的工艺条件下,薄膜厚度为500μm,结合强度是梯度涂层(NiAl和Al2O3的梯度沉积)的结合强度的两倍。The metal organic chemical vapor deposition （MOCVD） of alumina films on Fe-Cr-Ni alloy was performed in nitrogen at atmospheric pressure. This paper studied the influencing factors of substrate temperature, ASB temperature and carrier gas flow on the deposition rate of Al2O3 film. The Al2O3 films were investigated by SEM and EDS. It was indicated that in the condition of 125℃processing temperature, the thickness of film is 500μm and the bonding strength of film is twice as that of gradient layer （the gradient depositon of NiAl and Al2O3）.

关 键 词：化学气相沉积 氧化铝 沉积速率 薄膜 

分 类 号：TG174.444[金属学及工艺—金属表面处理]