抑制晶体管有源寄生效应研究  

The Research to Restrain Active Effects of Parasite Transistors

作　　者：吴伟[1] 孙勤[1] 马忠权[1] 

机构地区：[1]上海大学理学院,上海200444

出　　处：《甘肃科学学报》2007年第2期54-57,共4页Journal of Gansu Sciences

摘　　要：利用基尔霍夫电流定律修正双极晶体管的EM(Ebers-Moll,EM)模型,使得它适合描述4层结构的数字集成晶体管.利用数学软件MathCAD,对获取的EM模型数据作无近似处理.通过观察流经各个PN结的电流变化,可以研究数字晶体管在不同工作状态下寄生晶体管的效应.从而作为改善高集成情况下寄生效应的理论依据.The EM（Ebers-Moll,EM）model of transistors is improved by using Kirchhoff＇s law so as to characterize digital integrated transistors that have a four-layer structure. The data of EM model is to be dealt with without approximation. By comparing the variations of the current flowing through each PN iunction of the transistor, the effects of parasite transistors can be studied under different working states, especially under cut-off state and saturation. This research can be the theoretical basis for improving the effects of parasite transistors in highly integrated circuit.

关 键 词：EM模型 寄生晶体管 无近似 

分 类 号：TN321[电子电信—物理电子学]