Sol-gel法制备ZAO薄膜及其红外发射率的研究  

STUDY ON INFRARED EMISSIVITY OF Al-DOPED ZnO THIN FILMS PREPARED BY SOL-GEL PROCESS

作　　者：陈黄鹂[1] 罗发[1] 张玲[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710021

出　　处：《陕西科技大学学报（自然科学版）》2007年第2期58-62,共5页Journal of Shaanxi University of Science & Technology

基　　金：国家自然科学基金项目(90305016)

摘　　要：采用溶胶-凝胶工艺在石英玻璃基底上制备了ZAO（掺铝氧化锌）薄膜,系统研究了各工艺参数,如溶胶浓度、Al掺杂量及热处理温度对其结构和性能的影响.XRD分析结果表明,ZAO薄膜具有ZnO晶体结构并具有沿（002）晶面择优生长的特性.SEM结果显示,所制薄膜的晶粒尺寸约为50 nm,浸涂1次溶胶所得薄膜的厚度约为2.6μm.溶胶浓度为0.3 mol·L^-1,掺杂Al为3 at.%的薄膜试样在700℃热处理后,8-14μm波段的平均红外发射率降至0.568.Al-doped ZnO（ZAO） thin films were deposited on quartz glass substrates by sol-gel process. The phase structure, surface morphology and infrared emissivity in 8-14 μm wave- band of the ZAO thin films prepared at different conditions were investigated through X-ray diffraction （XRD）, field-emission scanning electron microscopy（SEM） and SRS000 spectrum radiometer, respectively. The XRD results show the phase structure of ZAO thin films is the same as ZnO with highly C-axis oriented. SEM results indicate that the crystal size of thin films is about 50 nm, and the thickness of ZAO thin films is about 2.6 μm with one time dipcoating. The average value of infrared emissivity in 8-14 μm waveband of the ZAO thin films was 0. 568, which was prepared at sol concentration, Al-doped concentration and heattreatment temperature of 0. 3 mol · L^-1 , 3at. % and 700 ℃, respectively.

关 键 词：SOL-GEL ZAO薄膜 红外发射率 红外隐身 

分 类 号：O484[理学—固体物理]