工艺参数对TVS器件电性能的影响  

Effects of Process Parameters on Electrical Performance of TVS Devices

作　　者：肖敏[1] 曾祥斌[1] 袁德成 孙树梅[1] 

机构地区：[1]华中科技大学,湖北武汉430074 [2]上海美高森美半导体有限公司,上海201108

出　　处：《电力电子技术》2007年第6期93-95,共3页Power Electronics

摘　　要：采用液态源扩散法制备了双向型瞬变电压抑制二极管(Transient Voltage Suppressor Diode,简称TVS)器件。研究了扩散温度、扩散时间、电阻率、钝化保护等工艺参数对TVS器件电性能的影响。扩散温度、扩散时间的增加将使扩散结的结深增加;电阻率的提高及结深的增加,将使TVS器件的雪崩击穿电压增大;合适的钝化保护方法将有助于减小器件的反向漏电流。给出了电压和扩散时间之间的经验估算公式,该公式可用来指导得到希望的TVS目标电压档。据验算,该公式的误差在10%以内。TVS devices were prepared by liquid diffusion technique.The effects of process parameters on the electrical performance of TVS diodes were described.These parameters include diffusion time, diffusion temperature, resistivity, and passivation technique.The results indiGated that the junction depth increase as the diffusion time and temperature increase, and avalanche breakdown voltage increase when the resistivity and junction depth increase.Furthermore, suitable passivation methods are helpful to the Standoff leakage current.The experiential formula used for estimating diffusion time was given.It＇s validated that the error is not larger than 10%.

关 键 词：半导体元器件 工艺参数/瞬变电压抑制二极管 

分 类 号：TN31[电子电信—物理电子学]