HBT自热效应对功率放大器偏置电路的影响及补偿  

Effect of HBT Self-Heating Effect on Bias Circuit for Power Amplifier and Its Compensation

作　　者：陈延湖[1] 申华军[1] 王显泰[1] 葛霁[1] 刘新宇[1] 吴德馨[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2007年第3期829-832,共4页Chinese Journal of Electron Devices

基　　金：中国科学院重大创新项目资助"新型高频;大功率化合物半导体电子器件研究(KGCX2-SW-107)"

摘　　要：研究了GaAs HBT的自热效应对功率放大器镜像电流源偏置电路性能的影响.HBT自热效应使得这种偏置电路的镜像精度和温度特性变差.利用HBT器件特有的集电极电流热电负反馈理论,通过优化基极偏置电阻的方法,对自热效应进行了有效补偿,偏置电路的电流镜像精度得到有效提高,偏置电流温度漂移由9.5%减小到0.5%.The effect of GaAs hbt Self-Heating effect on current mirror bias circuit for power amplifier was studied. The effect of self-heating degraded the mirror accuracy and the temperature characteristic of the bias circuit. According to the novel electrical-thermal negative feedback of hbt, a simple method of optimizing a base bias resistor was used to compensate the self-heating in this bias circuit. The results showed that the mirror accuracy was improved and the variation of the bias current as temperature was reduced from 9.5 % to 0. 5 %.

关 键 词：自热效应 HBT 镜像电流源偏置电路 功率放大器 

分 类 号：TN431[电子电信—微电子学与固体电子学]