NiFe薄膜AMR元件中非均匀退磁场和宽度的相关性  

DEPENDENCE OF NON-UNIFORM DEMAGNETIZING FIELD ON WIDTH OF NiFe THIN FILM AMR ELEMENTS

作　　者：张辉[1] 滕蛟[1] 于广华[1] 吴杏芳[1] 朱逢吾[1] 

机构地区：[1]北京科技大学材料物理系,北京100083

出　　处：《金属学报》2007年第6期599-602,共4页Acta Metallurgica Sinica

基　　金：国家自然科学基金项目50471093;国防基础科研项目A1420060203资助~~

摘　　要：采用磁控溅射方法制备了NiFe各向异性磁电阻(AMR)薄膜,经过光学曝光及离子刻蚀将NiFe薄膜制成了厚度t=20 nm、长度l=2．5 mm、宽度w分别为50,20,10,5和μm的AMR元件．测量了AMR元件的磁电阻效应．考虑沿宽度方向退磁场的非均匀性,计算了磁电阻比率．结果表明,宽度决定了AMR元件中的退磁场分布和边缘退磁场的大小,直接影响着AMR元件的磁化反转过程．宽度越小,元件中的边缘退磁场越大,在外磁场下的磁化反转也越困难．在磁化反转过程中,磁化反转先从中心开始,逐渐扩展到边缘．NiFe anisotropic magnetoresistive （AMR） thin films were prepared by magnetron sputtering. AMR elements with thickness of 20 nm, length of 2.5 mm, and widths of 50, 20, 10, 5 and 3μm were patterned by using optical lithography and ion etching. The magnetoresistance effects of AMR elements were studied. Taking into account the non-uniform demagnetizing field along the width of AMR elements, the magnetoresistance ratio was numerically obtained. The results showed that the distributions of demagnetizing field and edge .demagnetizing field depend on the width, which directly affect the magnetization switch. For smaller width, the edge demagnetizing field is stronger, which makes the magnetization switch more difficult. The magnetization switch in the center of AMR element first started, and ended in the edge.

关 键 词：NiFe膜 各向异性磁电阻(AMR) AMR元件 非均匀退磁场 磁化反转 

分 类 号：TP211[自动化与计算机技术—检测技术与自动化装置]