2.5Gbit/s PHEMT前置放大器噪声分析与验证  

Noise analysis and verification of 2.5 Gbit/s PHEMT preamplifier

作　　者：蔡水成[1] 王志功[1] 朱恩[1] 

机构地区：[1]东南大学射频与光电集成电路研究所,南京210096

出　　处：《东南大学学报（自然科学版）》2007年第3期364-367,共4页Journal of Southeast University：Natural Science Edition

基　　金：国家高技术研究发展计划(863计划)资助项目(2001AA312060)

摘　　要：根据OMMIC公司通过测量得到的0.2μm GaAs PHEMT器件参数模型和噪声模型,设计了2.5Gbit/s的共源跨阻前置放大器.并根据PHEMT晶体管Y参数下的噪声模型,结合Y参数和ABCD参数下的噪声密度矩阵,分析了电路在带有晶体管噪声源情况下整个电路的噪声电压,得出了共源跨阻前置放大器等效输入噪声电流密度的理论公式.实现了芯片制作,并且对芯片进行了噪声参数的测量,测量结果、仿真结果和理论分析结论在6GHz的频率范围内基本符合.A 2.5 Gbit/s common-source trans-impedance amplifier is analyzed in theory and designed based on the OMMIC＇s GaAs pseudomorphic high electron mobility transistor （PHEMT） noise model. Based on the OMMIC PHEMT Y parameter noise model and combined Y and ABCD parameter noise density matrix, the noise voltage of the common-source trans-impedance amplifier with transistor noise source is analyzed in this paper, and the formula of input noise current density is presented. A 2.5 Gbit/s low noise preamplifier based on 0.2 μm GaAs PHEMT is realized. The test results and the simulation result are in accordance with the theory analysis in the bandwidth of 6 GHz.

关 键 词：PHEMT 跨阻放大器 噪声 

分 类 号：TN722.3[电子电信—电路与系统]