射频磁控溅射制备硼碳氮薄膜  

Preparation of boron carbon nitride thin films by RF magnetron sputtering

作　　者：王玉新[1] 冯克成[1] 张先徽[1] 王兴权[1] 赵永年[2] 

机构地区：[1]长春理工大学理学院,吉林长春130022 [2]吉林大学超硬材料国家重点实验室,吉林长春130012

出　　处：《功能材料》2007年第6期889-890,894,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(59831340)

摘　　要：采用射频磁控溅射技术,用六角氮化硼和石墨为溅射靶,以氩气(Ar)和氮气(N2)为工作气体,在Si(100)衬底上制备出硼碳氮薄膜。通过X射线衍射(XRD)、傅里叶红外吸收光谱(FTIR)和X射线光电子能谱(XPS)等分析手段对样品结构、组分进行了分析。结果表明,样品的组成原子之间实现了原子级化合,且薄膜为乱层石墨结构。样品中B、C、N的原子比近似为1∶1∶1。Boron carbon nitride thin films were deposited by radio frequency （RF） magnetron sputtering using a composite target consisting of h-BN and graphite in an Ar-N2 gas mixture. The structure and composition of the sample were characterized by X-ray diffraction （XRD）,fourier transform infrared absorption spectroscopy （FTIR） and X-ray photoelectron spectroscopy （XPS）. The results suggested that the films are atomic-level hybrids composed of B,C and N atoms and they are crystallization of turbostratic. The content ratio of B to N to C is near 1 ： 1 ： 1.

关 键 词：射频磁控溅射 硼碳氮薄膜 红外吸收光谱 

分 类 号：O484.4[理学—固体物理]