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作 者:严朝辉[1] 汪建华[1] 满卫东[1] 熊军[1]
机构地区:[1]武汉工程大学湖北省微波等离子体化学与新材料重点实验室,武汉430073
出 处:《金刚石与磨料磨具工程》2007年第3期32-35,共4页Diamond & Abrasives Engineering
基 金:湖北省科技攻关计划项目(2002AA105A02);湖北省高等学校优秀中青年科技创新团队资助计划项目
摘 要:化学气相沉积(CVD)制备的金刚石膜表面粗糙且厚薄不均匀,在许多情况下不能直接使用,必须对其进行抛光。本文研究了不同型号的金刚石微粉对CVD金刚石厚膜研磨的影响,通过对研磨结果的比较分析,优化出一种高质量高效率的抛光方法,即先采用W40和W28金刚石微粉,分别研磨2 h,然后用W0.5金刚石微粉研磨4 h。经扫描电子显微镜(SEM)和原子力显微镜(AFM)测试分析表明:金刚石膜的平均去除率为12.2μm/h,粗糙度Ra由4.60μm降至3.06 nm,说明该抛光方法能实现金刚石膜高质量、高效率的抛光。Diamond films prepared by Chemical Vapor Deposition (CVD) usually have a very rough surface and uneven thickness and should be polished before application. In this paper, we investigated the polishing effects of CVD diamond films using different sizes diamond powder and introduced a high quality and efficient polishing method, that is to polish the CVD diamond film first with diamond powder of W40 and W28 for 2 hours, then continue the polishing with diamond powder of W0.5 for 4 hours. The Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM) test results of the polished diamond film show that the average removal rate of the diamond film is 12.2 μm/h and the surface roughness is decreased from 4.60 μm to 3.06 nm by this method. The experiment results also show that it' s a high quality and efficient polishing method for CVD diamond films.
分 类 号:TQ164[化学工程—高温制品工业]
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