离化团簇束法制备c轴取向的ZnO薄膜  

An Ionized Cluster Beam(ICB) Deposition Equipment Used to Make c-Axis Oriented ZnO Thin Films

作　　者：杨种田[1] 柯贤文[1] 刘传胜[1] 郭立平[1] 付德君[1] 

机构地区：[1]武汉大学物理科学与技术学院,湖北武汉430072

出　　处：《武汉大学学报（理学版）》2007年第3期333-336,共4页Journal of Wuhan University:Natural Science Edition

基　　金：国家自然科学基金资助项目(10435060)

摘　　要：为了探索低温可调控ZnO薄膜沉积技术,提出了一种新的ZnO薄膜制备方法,即离化团簇束(ICB)法,并自行设计研制了应用该方法制备ZnO薄膜的专门装置.采用超音速喷嘴获得高速锌原子团簇束,用Hall等离子体源产生氧离子束离化锌原子团簇,获得了较高的离化率.在沉积过程中,可以通过调节衬底偏压、氩氧比、衬底加热温度等参数,来控制成膜的质量;应用这个装置成功地在硅衬底上制备的ZnO薄膜,经XRD和EDS检测,薄膜的c轴取向一致,Zn、O原子百分比接近于1∶1,成膜质量好.An ionized cluster beam （ICB） deposition equipment used to make ZnO thin films is introduced in this paper. The Hall ion source is employed to ionize the high speed Zn cluster beams generated by a supersonic air spout. Substrate bias voltage and temperature, the proportion of Ar/O can be changed to adjust and control the deposition of the ZnO thin films. After the equipment was set up and debugged, the ZnO thin film with good quality and highly c-axis oriented was obtained on silicon substrate, by ICB technique.

关 键 词：离化团簇束技术 Hall离子源 ZNO薄膜 

分 类 号：O782[理学—晶体学] TN304.2[电子电信—物理电子学]