溅射及RTA处理对ITO薄膜特性的影响  

Influence to photoelectric properties of ITO thin film by sputtering condition and RTA processing

作　　者：袁广才[1] 徐征[1] 张福俊[1] 王勇[1] 

机构地区：[1]北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室,北京100044

出　　处：《材料研究学报》2007年第3期282-286,共5页Chinese Journal of Materials Research

基　　金：国家自然科学基金60576016;863计划2006AA03Z0412;北京市自然科学基金2073030;国家重点基础研究973发展规划2003CB314707;国家自然基金重点10434030资助项目.~~

摘　　要：采用RF-磁控溅射生长铟锡氧化物薄膜(ITO),研究了生长条件、快速热退火(RTA)温度对薄膜的晶化情况、透过率、电导率以及表面形貌的影响．结果表明:改变In_(2-x)^(3+)(Sn_x^(4+)·e)O_3制备过程中的氧含量使Sn^(4+)·e对电子束缚能力发生变化,过高的氧分压使费米能级E_F降低,功函数W_s增大,氧气流量为2 ml/min、退火温度为450℃时薄膜电阻率最低为2．5×10^(-4)Ω·cm,透过率达88%以上．The ITO thin films were deposited by radio frequency sputtering method, the effect of processing parameters and thermal annealing temperature on thin film properties, such as preferred orientation, transmission, conductivity and surface morphology, have been investigated. The results shown that the variation of oxygen content during the deposition made the biding energy between Sn^4＋.e and electrons changed. Higher oxygen content is necessary to gain lower EF and higher Ws. The minimum resistivity 2.5×10^-4Ω·cm was obtained under the condition that the sputtering oxygen flow was 2mL/min and the film was annealed at 450℃. And the average for visible light goes beyond after annealing, besides the transmission was above 88% under the same condition.

关 键 词：无机非金属材料 反应磁控溅射 ITO薄膜 快速热退火(RTA) 电阻率 

分 类 号：TQ050[化学工程]