一种改进的超低压电压基准源设计  

Improved Design of a Super Low Voltage Reference

作　　者：游剑[1] 刘永根[1] 罗萍[1] 张波[1] 李肇基[1] 

机构地区：[1]电子科技大学,电子薄膜与集成器件国家重点实验室

出　　处：《中国集成电路》2007年第6期24-27,23,共5页China lntegrated Circuit

摘　　要：本文利用NMOS管与PMOS管栅源电压的温度特性及衬底偏置效应,设计了一种带曲率补偿输出电压约为233mV的电压基准源。该电路结构简单,电源抑制特性较好,并与传统带隙基准电压的温度特性相似。利用0.5-CMOS工艺对电路进行仿真,仿真结果表明:电源电压为1V时,在-40℃至125℃温度范围内,基准源的温度系数约为11ppm/℃;在100Hz和10MHz时电源抑制比分别为-58.6dB和-40dB。A CMOS voltage reference based on differenced temperature characters of VGS and substrate bias effects of a NMOS and a PMOS is introduced. This circuit is simple with good PSRR. The temperature character is the same as traditional band-gap reference. The temperature coefficient is 1 lppm/℃ from -40℃-125℃ and the power rejection ratio at 100 Hz and 10 MHz are -58.6 dB and -40dB by simulating in a 0.5-CMOS process.

关 键 词：电压基准 衬底电压 阈值电压 曲率补偿 

分 类 号：TN431.1[电子电信—微电子学与固体电子学]