深亚微米沟道δ掺杂NMOSFET结构特性和设计  

Design and Performance of Deep－Submicron MOSFET's with δ－Shaped Channel Doping Profiles

作　　者：刘卫东[1] 李志坚[1] 刘理天[1] 余志平[1] 

机构地区：[1]清华大学微电子学研究所,美国斯坦福大学集成系统中心

出　　处：《电子学报》1997年第5期21-24,共4页Acta Electronica Sinica

基　　金：国家教委博士后基金;国家八五攻关资助

摘　　要：利用能量输运模型（ＥＴＭ）系统研究了沟道δ掺杂分布对深亚微米ＭＯＳＦＥＴ结构特性的影响；发现δ掺杂结构不仅能够有效地抑制短沟道效应，而且可以获得较高的驱动速度，改善了掺杂容限特性；只要δ掺杂峰值浓度离界面保持一定距离，则热电子产生率无明显增长；提出的δ掺杂分布适用于０．１μｍＭＯＳＦＥＴ，与均匀掺杂相比，它具有较高的综合品质因子．Based on the energy transport model (ETM), the influence of δ-shaped dopingprofiles on deep-submicron MOSFET performance is systematically investigated. It is discoveredthat δ-shaped doping configuration can not only effectively suppress short-channel effects,but alsocan provide high driving capability with improved doping fluctuation tolerances. Simulationsdemonstrate that the incorporation of δ-shaped doping will not result in noticeable increase in thehot-electron generation rate as long as the peak doping is placed for a desired distance away the Si/SiO2 interface. The proposed δ doping profile for 0. lμm MOSFET's exhibits even higher figure ofmerits than the uniform substrate doping.

关 键 词：Δ掺杂 品质因子 短沟道效应 MOSFET 半导体技术 

分 类 号：TN302[电子电信—物理电子学] TN305.3