γ辐照对SiGe HBT特性的影响  

The effects of γ irradiation on SiGe HBT

作　　者：杨晨[1] 刘轮才[2] 龚敏[1] 蒲林[2] 程兴华[1] 谭开州[2] 王健安[2] 石瑞英[1] 

机构地区：[1]四川大学物理科学与技术学院微电子学系 [2]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《四川大学学报（自然科学版）》2007年第3期587-590,共4页Journal of Sichuan University(Natural Science Edition)

基　　金：模拟集成电路国家重点实验室基金项目(51439040105SC02)

摘　　要：对室温下γ射线辐照对SiGe异质双极晶体管(HBT)直流特性的影响进行了研究.结果表明,γ辐照后SiGe HBT的集电极电流和基极电流都有不同程度的增加,直流电流增益减少.并对γ辐照后引起SiGe HBT集电极电流净增加的原因进行了探讨.这可能有助于其抗辐照模型的建立.A series of γ irradiation experiments are made on SiGe HBT and researched the total dose effect of SiGe HBT. It shows that the degradation of DC current gain of SiGe HBT, both the collector and base current have increased. Although the reason of DC current gain degenerate by the change of base current have been discussed on some literatures, the increase of collector current have been almost not involved. For that, this paper not only explained the change of base current, but also focused on the mechanism of increased collector current.

关 键 词：SIGEHBT 基极电流 集电极电流 Γ辐照 

分 类 号：TN322.8[电子电信—物理电子学]