HFCVD系统中衬底接触热阻的研究  

Determination of Thermal Contact Resistance between Substrate and Its Support in Hot Filament CVD

作　　者：李磊[1] 左敦稳[1] 徐锋[1] 黎向锋[1] 卢文壮[1] 

机构地区：[1]南京航空航天大学机电学院,南京210016

出　　处：《人工晶体学报》2007年第1期27-31,51,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金资助项目(No.50275076)

摘　　要：建立了热丝CVD大面积金刚石膜沉积的衬底温度场模型,对影响衬底温度场的接触热阻及其他相关沉积参数进行了模拟计算。根据实验结果,对接触热阻的计算公式进行了修正。当ζ=0.75时,计算结果和实验结果基本上吻合。在仿真条件下,考虑衬底三维热传导以及热丝温度的不均匀分布使衬底温度场的均匀性明显优于纯热辐射下的温度场。这些计算结果为制备大面积高质量的金刚石薄膜提供了理论基础。The substrate temperature field model for large area diamond deposition by hot-filament chemical vapor deposition （HFCVD） method is proposed. The influence of thermal contact resistance and other deposition parameters on substrate temperature field during diamond growth were calculated. According to the experiment results, the formula used to calculate the thermal contact resistance was adjusted. When ζ = 0.75, the calculated results agree with the experiment results from thermocouple. Considering the effect of 3D-substrate heat conduction and the nonuniform filament temperature distribution, the substrate temperature field is more uniform than in pure heat radiation system. All the results provided the basis for deposition of high quality and uniform diamond films.

关 键 词：热丝化学气相沉积法 接触热阻 有限元 温度场 金刚石膜 

分 类 号：O484[理学—固体物理]