脉冲激光沉积法在SiO_2/Si衬底上生长c轴取向LiTaO_3薄膜  

C-axis Oriented LiTaO_3 Thin Film Prepared on SiO_2/Si Substrate by Pulsed Laser Deposition

作　　者：王新昌[1] 叶志镇[2] 曹亮亮[2] 赵炳辉[2] 

机构地区：[1]郑州大学物理工程学院材料物理教育部重点实验室,郑州450052 [2]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《人工晶体学报》2007年第1期134-137,145,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金重大研究规划项目资助(No.90101009)

摘　　要：本文利用脉冲激光沉积法,系统研究了衬底温度和氧压对硅基LiTaO3薄膜质量及c轴取向性的影响,结果表明衬底温度和氧压对LiTaO3薄膜的c轴取向性及结晶质量有很大的影响,在650℃、30Pa时可以生长出高c轴取向LiTaO3薄膜。采用扫描电镜和原子力显微镜对最佳条件下制得薄膜的表面形貌进行了分析,发现薄膜表面光滑,晶粒尺寸均匀致密,薄膜表面粗糙度约为3.6nm。Highly c-axis oriented LiTaO3 thin film has been deposited on Si substrate with amorphous SiO2 buffer layer by pulsed laser deposition. The effects of substrate temperature and oxygen pressure on the texture and crystallinity of the film have been systematically investigated. Highly c-axis oriented LiTaO3 thin film can be grown at substrate temperature of 650℃ and under the oxygen pressure of 30Pa. The SEM and AFM measurements show that the achieved films have smooth surface and uniformly grains. The RMS roughness of the film surface was 3.6nm.

关 键 词：LiTaO3薄膜 SiO2/Si衬底 C轴取向 脉冲激光沉积 

分 类 号：O484[理学—固体物理]