磷化铟复合沟道高电子迁移率晶体管击穿特性研究  

Research of breakdown characteristic of InP composite channel HEMT

作　　者：李潇[1] 张海英[2] 尹军舰[2] 刘亮[2] 徐静波[2] 黎明[2] 叶甜春[2] 龚敏[1] 

机构地区：[1]四川大学物理科学与技术学院,成都610064 [2]中国科学院微电子研究所,北京100029

出　　处：《物理学报》2007年第7期4117-4121,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60276021);国家重点基础研究规划(批准号:G2002CB311901)资助的课题.~~

摘　　要：用密度梯度量子模型定量研究了磷化铟(InP)复合沟道高电子迁移率晶体管(HEMT)的击穿特性,考虑了复合沟道内碰撞电离以及沟道量子效应,重点研究了器件击穿电压随In0.7Ga0.3As沟道厚度的变化关系,提出了提高击穿电压的方法,采用商用器件模拟软件Sentaurus模拟了器件的开态击穿电压,对比了实验和模拟的结果.研究表明:适当减小In0.7Ga0.3As沟道层的厚度可以在保持器件饱和电流基本不变的前提下大幅度提高开态击穿电压,这对于提高InP基HEMT的功率性能具有重要意义.Density gradient quantum model has been used to analyse the breakdown characteristic of InP-based composite channel HEMT（high electron mobility transistor）. The collision ionization in composite channel and quantum effect has been taken into consideration. We payed great attention to the relationship of on-state breakdown voltage with respect to the thickness of In0.7Ga0.3As channel, and promoted a method to enhance the on-state breakdown voltage. A commercial 2D-device simulation program. Sentaurus has been used to simulate the on-state breakdown voltage of the device. A comparison has been made between the result of simulated and measured data. The result shows that with the reduction of the thickness of In0.7 Ga0.3 As channel, on-state breakdown voltage of the device will be enhanced greatly without reducing saturation current, which has a significant meaning for promoting the power performance of InP-based HEMT.

关 键 词：磷化铟 高电子迁移率晶体管 密度梯度模型 击穿 

分 类 号：TN32[电子电信—物理电子学]