分子束外延法在Sapphire衬底上生长的Zn_(1-x)Mg_xO薄膜折射率及厚度的测试  

Measurement of thickness and refractive index of Zn_(1-x)Mg_xO film grown on sapphire substrate by molecular beam epitaxy

作　　者：延凤平[1] 郑凯[1] 王琳[1] 李一凡[1] 龚桃荣[1] 简水生[1] 尾形健一 小池一步 佐佐诚彦 井上正崇 矢野满明 

机构地区：[1]北京交通大学光波技术研究所,北京100044 [2]Bio Venture Center,Osaka Institute of Technology [3]New Material Research Center,Osaka Institute of Technology [4]New Material Research Center,Osaka Institute of Technology,Bio Venture Center,Osaka Institute of Technology

出　　处：《物理学报》2007年第7期4127-4131,共5页Acta Physica Sinica

基　　金：国家自然科学基金重点项目(批准号:60337010)资助的课题.~~

摘　　要：利用偏振光椭圆率测量仪对分子束外延(MBE)法在Sapphire衬底上生长的Zn1-xMgxO薄膜的薄膜折射率和厚度进行了测试.结合ICP法测得的薄膜中的Mg组成量,经数值拟合,导出表征薄膜厚度与薄膜生长条件、薄膜折射率与薄膜中的Mg组成量之间关系的曲线,为MBE法在Sapphire衬底上生长Zn1-xMgxO薄膜时控制薄膜厚度以及在制作Zn1-xMgxO薄膜的波导时控制薄膜的折射率提供了理论依据.The thickness and refractive index of Zn1 - x MgxO film grown on A-sapphire substrate by molecular beam epitaxy were measured by ellipsometry. Combined with Mg content measured by inductively coupled plasma （ICP）, the curves showing the relationships of thickness with film growth condition and the refractive index with the Mg content in the film were deduced by numerical analysis, which may serve as a theoretical basis for controlling the thickness and the refractive index in Zn1- x Mgx 0 film growth process.

关 键 词：ZNMGO薄膜 偏振光椭圆率测量仪 折射率 分子束外延(MBE) 

分 类 号：O484.1[理学—固体物理]