可集成的高效率InGaAsP相位调制器  

HIGHLY EFFICIENT InGaAsP/InP PHASE MODULATOR FOR INTEGRATED OPTOELECTRONICS

作　　者：邬祥生[1] 吴学海[1] 李允平[1] 吕章德[1] 龚连根 周萍[1] 吴长川 

机构地区：[1]中国科学院上海冶金研究所

出　　处：《高速摄影与光子学》1990年第4期343-348,共6页

基　　金：863计划和国家自然科学基金

摘　　要：GaAs-AlGaAs和InGaAsP-InP体系光电波导调制器已日益引起人们的兴趣。预计它们可以用于高速光通信,相干光通信和激光陀螺。 本文报道一种用耗尽边带传输加反向偏压p-n结结构的高效InGaAsP/InP相位调制器。该调制器用液相外延、湿法腐蚀和常规工艺制备。这种波导禁带波长1.3μm的调制器在1.52μm波长观察到很大的相位移效率,对TE模和TM模来说分别为60°/V·mm和43°/V·mm。There has been an increasing interest in the development of optical waveguide modulator in GaAs-AlGaAs or InGaAsP-InP system. Applications are expected in high speed optical communications, coherent light wave systems and laser gyroscope.In this paper, we report a righly efficient InGaAsP/InP phase modulator using depletion edge translation in a reverse biased p-n junction. The device was fabricated by liquid phase epitaxy, wet chemical etching and other conventional processings. In the waveguide modulators with bandgap of 1.3 pm wavelength, the largest phase shifting efficiency of 60° /V .mm and 43° / V.mm for the TE and.TM modes, respectively, for a reverse-biased structure was observed at 1.52 uuuuum wave-iength.

关 键 词：INGAASP 相位调制器 相位移效率 

分 类 号：TN761.3[电子电信—电路与系统]