Project supported by the National Key Research and Development Program,China (Grant No.2018YFB2003305);the National Natural Science Foundation of China (Grant Nos.61774165 and 61827823);the Key Laboratory Fund in Suzhou Institute of Suzhou Nano-Tech and NanoBionis (SINANO),Chinese Academy of Sciences (Grant No.Y4JAQ21005)。
The internal behaviors of carriers in InGaAsP single-junction solar cell are investigated by using electroluminescence(EL) measurements. Two emission peaks can be observed in current-dependent electroluminescence spec...
the National Nature Science Foundation of China(61474076 and 61704106);the Young Elite Scientist Sponsorship Program by China Association for Science and Technology(2017QNRC001);Shanghai Rising-Star Program(18QB1402500 and 19QB1403800).
现有1.0 eV/0.75 eV InGaAsP/InGaAs双结太阳电池的开路电压小于各子电池的开路电压之和,鲜有研究探索开路电压损耗的来源以及如何抑制。通过研究发现,InGaAs底电池背场/基区界面处的少数载流子输运的主要机制是热离子发射,而不是缺陷...
partially supported by the Jiangsu Province Science Foundation for Youths (No. BK20170431);the National Natural Science Foundation of China (No. 61604171)。
Laser photovoltaic devices converting 1064 nm light energy into electric energy present a promising prospect in wireless energy transmission due to the commercial availability of high power 1064 nm lasers with very sm...