InGaAsP单结太阳电池基区的优化与模拟  

Base Optimization and Simulation of InGaAsP Single Junction Solar Cell

作　　者：胡凯 涂洁磊[1] 李雷[1] 余首柘 吴佳豪 HU Kai;TU Jie-lei;LI Lei;YU Shou-zhe;WU Jia-hao(Yunnan Provincial Key Laboratory of Rural Energy Engineering,Yunnan Normal University,Kunming 650500,China)

机构地区：[1]云南师范大学云南省农村能源工程重点实验室,云南昆明650500

出　　处：《云南师范大学学报（自然科学版）》2021年第5期1-4,共4页Journal of Yunnan Normal University:Natural Sciences Edition

基　　金：国家自然科学基金资助项目(61664010).

摘　　要：通过有限元分析软件APSYS对1.0 eV的InGaAsP单结太阳电池进行建模仿真,通过改变基区的厚度和掺杂浓度,得到短路电流密度、开路电压、填充因子及转换效率等电学参数,最终在AM0、1 Sun、300 K不加减反射膜的情况下效率达到12.64%.The finite element analysis software APSYS is used to model and simulate the 1.0 eV InGaAsP single junction solar cell.By changing the thickness and doping concentration of the base region,the short-circuit current density,open circuit voltage,filling factor,conversion efficiency and other electrical parameters are obtained.Finally,the efficiency reaches 12.64%under AM0 spectrum,a solar concentration and 300 K without antireflection film,which provides a reference for the experiment.

关 键 词：INGAASP 单结太阳电池 APSYS有限元分析软件 基区 

分 类 号：TM914.4[电气工程—电力电子与电力传动]