1064 nm InGaAsP multi-junction laser power converters  

作　　者：Jiajing Yin Yurun Sun Shuzhen Yu Yongming Zhao Rongwei Li Jianrong Dong 

机构地区：[1]Key Laboratory of Nano Devices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China [2]Nano Science and Technology Institute,University of Science and Technology of China,Hefei 230026,China

出　　处：《Journal of Semiconductors》2020年第6期39-43,共5页半导体学报（英文版）

基　　金：partially supported by the Jiangsu Province Science Foundation for Youths (No. BK20170431);the National Natural Science Foundation of China (No. 61604171)。

摘　　要：Laser photovoltaic devices converting 1064 nm light energy into electric energy present a promising prospect in wireless energy transmission due to the commercial availability of high power 1064 nm lasers with very small divergence. Besides their high conversion efficiency, a high output voltage is also expected in a laser energy transmission system. Meanwhile,1064 nm InGaAsP multi-junction laser power converters have been developed using p^+-InGaAs/n^+-InGaAs tunnel junctions to connect sub-cells in series to obtain a high output voltage. The triple-junction laser power converter structures are grown on p-type InP substrates by metal-organic chemical vapor deposition(MOCVD), and InGaAsP laser power converters are fabricated by conventional photovoltaic device processing. The room-temperature I–V measurements show that the 1 × 1 cm^2 triplejunction InGaAsP laser power converters demonstrate a conversion efficiency of 32.6% at a power density of 1.1 W/cm^2, with an open-circuit voltage of 2.16 V and a fill factor of 0.74. In this paper, the characteristics of the laser power converters are analyzed and ways to improve the conversion efficiency are discussed.

关 键 词：INGAASP multi-junction laser power converter conversion efficiency 

分 类 号：TN24[电子电信—物理电子学]