无制冷高速直调1.5μm AlGaInAs-InP DFB激光器  

High-Speed Direct Modulated 1.5 μm Uncooled AlGaInAs-InP MQW-DFB Lasers

作　　者：蔡鹏飞[1] 孙长征[1] 熊兵[1] 王健[1] 罗毅[1] 

机构地区：[1]清华大学电子工程系集成光电子学国家重点实验室,北京100084

出　　处：《光电子．激光》2007年第6期666-668,共3页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60536020;60390074)

摘　　要：利用AlGaInAs-InP应变多量子阱(MQW)材料导带偏移量大的特点,制作了基于AlGaInAs-InP材料的无制冷脊波导分布反馈式(DFB)激光器。为提高器件调制速度,制作了2μm宽的脊波导结构,并在脊波导两侧填充1.5μm厚的SiO2层,从而有效降低器件寄生电容。室温条件下,DFB激光器典型阈值为15 mA,特征温度达88 K,边模抑制比大于50 dB,3 dB小信号调制响应带宽超过15 GHz。5 μm ridge-waveguide uncooled DFB lasers were fabricated based on AlGaInAs-InP quantum wells. In order to improve the speed of the device,a 2 μm-wide ridge was formed and a 1.5 μm-thick SiO2 insulation layer was deposited beneath the bonding pad to reduce the parasite capacity. The device has achieved a typical threshold current of 15 mA,a characteristic temperature of 88 K,a side-mode suppression ratio over 50 dB,and a 3 dB small signal response bandwidth of over 15 GHz.

关 键 词：AlGaInAs-InP 分布反馈式(DFB)激光器 无制冷 直接调制带宽 

分 类 号：TN365[电子电信—物理电子学]