MOS型场效应管的VHDL-AMS行为建模与仿真  

Behavioral Modeling and Simulation of MOSFET based on VHDL-AMS

作　　者：耿彦明[1] 汪源[1] 张健[1] 

机构地区：[1]北京电子科技学院,北京100070

出　　处：《北京电子科技学院学报》2007年第2期49-51,共3页Journal of Beijing Electronic Science And Technology Institute

摘　　要：本文提出一种基于SPICE模型半导体器件的VHDL-AMS行为建模方法,给出了MOS场效应管模型中温度效应、噪声、直流和电容方程的行为模型,最后以CMOS反相器电路为例在混合信号仿真器SMASH5.72中验证了该行为模型的正确性。This paper presents a VHDL-AMS behavioral modeling method for the semiconductor devices based on Spice model, and the behavioral model of MOSFET is also provided,including models for temperature effects, noise, DC current and capacitance equations. Finally we take the CMOS inverter circuit as example and make use of the mixed signal simulator SMASH5.5 to verify the behavioral model,

关 键 词：MOS场效应管 SPICE VHDL-AMS 行为建模 

分 类 号：TN402[电子电信—微电子学与固体电子学]