退火条件对ZnO薄膜结构和光学性能的影响  

Influence of Annealing Temperature on Structure and Optical Properties of Zinc Oxide Films

作　　者：范利宁[1] 袁宁一[1] 李金华[1] 

机构地区：[1]江苏工业学院功能材料实验室,江苏常州213164

出　　处：《江苏工业学院学报》2007年第2期4-6,共3页Journal of Jiangsu Polytechnic University

基　　金：江苏省自然科学基金项目(BK2006042)

摘　　要：采用溶胶-凝胶法在单晶硅Si(100)衬底上制备了ZnO薄膜,研究了退火温度对ZnO结构和光学性能的影响。实验发现,退火可以明显地改善ZnO薄膜的结构和光学性能。随着退火温度的升高,ZnO薄膜的晶粒增大,同时在室温下观察到明显的紫外发光现象,其紫外PL谱峰值变强,并有红移现象。ZnO films were fabricated by Sol-Gel method on （001） Si substrates. The influence of annealing temperature on structure and optical properties of ZnO films was investigated. Annealing could improve crystallization and optical properties of ZnO films evidently. With the annealing temperature increasing, the grain size became larger and ultraviolet emission was observed at room temperature. While annealing temperature was higher, PL peak was stronger and had a little red shift.

关 键 词：ZNO薄膜 溶胶-凝胶法 光学性能 退火温度 

分 类 号：TB43[一般工业技术] O552.6[理学—热学与物质分子运动论]