CuI半导体膜的电化学制备与性质  

Electrochemical Preparation and Properties of CuI Semiconductor Film

作　　者：王钦忠[1] 汪正浩[1] 

机构地区：[1]北京师范大学化学学院,北京100875

出　　处：《应用化学》2006年第10期1161-1165,共5页Chinese Journal of Applied Chemistry

摘　　要：用简单的电化学方法制备出了机械性能较强的CuI半导体膜,这种半导体膜是由大量的三角形片状微粒组成的。利用交流阻抗方法在pH值分别为0、2、4和7的0.5 mol/L Na2SO4溶液中研究了这种膜电极的电化学性质。研究发现,溶液pH值对CuI半导体膜的阻抗有较大的影响,pH值越小则电化学反应电阻就越大;同时,溶液的pH值也对CuI半导体膜电极的表面态有着较大的影响,pH值越大表面态密度越大。在pH值为0的Na2SO4溶液中测得CuI半导体的Efb为0.023 V(vs.SCE)。Cuprous iodide semiconductor film consisted of means of electrochemical method. The electrochemical 0. 5 mol/L Na2SO4 solutions with pH values set at 0, 2, 4 （EIS）. The result reveals that the pH value of electrolyte a large amount of triangular sheets was prepared by properties of the film were investigated in four and 7 v/a Electrochemical Impedance Spectroscopy can affect the electrochemical properties. The lower the pH value is, the larger the reaction resistance is with the increase of pH, the surface scate density of the semiconductor was increased as the CuI lewis acid tends to absorb OH^- ion its surface easily. The flat-band potential measured in 0. 5 mol/L Na2SO4 solution with pH =0 is 0. 002 3 V（vs. SCE）.

关 键 词：CuI半导体 交流阻抗 平带电位 

分 类 号：O646[理学—物理化学]