Si芯片表面纳米粒子的粘结力及其干法清除  

Adhesion and Removal Silica Wafer by Dry of Nanoparticles on Cleaning Method

作　　者：戴剑锋[1] 王青[1] 李维学[1] 李杨[1] Henry I．Smith 

机构地区：[1]兰州理工大学有色金属新材料国家重点实验室,甘肃兰州730050 [2]美国麻省理工学院纳米结构与制造实验室,Cambridge,MA02139

出　　处：《纳米科技》2007年第3期4-8,共5页

基　　金：甘肃省科技攻关项目

摘　　要：系统地研究了纳米粒子在硅芯片表面的各种附着力，如范德瓦耳斯力、塑性形变吸附力、毛细现象凝聚力、静电力和重力附加力，以及高速流体对它的拖动力和提拉力，并简单计算了在各种情况下这些力的大小。介绍了干法清除纳米污染物的几种新方法，如超临界流体清除法、高速气凝胶清除法、激光清除法、气相化学清除法和光化学清除法。Many kinds of adhesion forces between submicron particles or nanoparticles and silicon wafer, such as London-van de Waals force, inelastic deformation induced adhesion force, capillary force, electrostatic force and gravitational force et al. are studied comprehensively. The removing drag force and lift force of linear shear flow and turbulent flow exerting on particles are also studied and the magnitude of all kinds of forces above are calculated. Some new kinds of dry cleaning methods such as supercritical fluid cleaning, high pressure gas and gel cleaning, laser cleaning, gas-chemically and Photo-chemically enhanced cleaning are described.

关 键 词：附着 清除 纳米粒子 干法清洗 

分 类 号：TN07[电子电信—物理电子学]