绒面ZnO薄膜的生长及其在太阳电池前电极的应用  

Growth of Textured ZnO Thin Films and Their Front Electrodes for Application in Solar Cells

作　　者：陈新亮[1] 薛俊明[1] 孙建[1] 赵颖[1] 耿新华[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,南开大学光电子薄膜器件与技术天津市重点实验室,南开大学光电信息技术科学教育部重点实验室,天津300071

出　　处：《Journal of Semiconductors》2007年第7期1072-1077,共6页半导体学报（英文版）

基　　金：天津市自然科学基金(批准号:043604911);国家重点基础研究发展规划(批准号:2006CB202602;2006CB202603)资助项目~~

摘　　要：研究了MOCVD技术制备的不同B2H6掺杂流量下ZnO薄膜的微观结构和光电性能变化.XRD和SEM的研究结果表明,ZnO薄膜具有（110）峰择优取向的绒面结构特征.当B2H6流量为10sccm时,在6cm×6cm面积玻璃衬底上生长出厚度为1000nm,方块电阻为~12Ω/□,平均透过率大于80%,迁移率为30.5cm2/（V.s）的绒面结构ZnO薄膜.PL谱测试表明B掺杂提高了ZnO薄膜的晶体质量,有力地说明了B掺杂ZnO薄膜具有更好的电学稳定性;低压H2氛围中退火可以有效提高ZnO薄膜的电子迁移率.将其用作Si薄膜太阳电池的前电极,电池性能与日本Asahi-UtypeSnO2作前电极的电池具有同等效果.The structural,optical,and electrical properties of ZnO thin films grown by metal organic chemical vapor deposition at different B2H4 flow rates were investigated. XRD spectra and SEM images indicate that all the ZnO films have the preferential orientation of （110） peak,showing textured surfaces. When the BzH6 flow rate was set at 10sccm,a low sheet resistance （12Ω/□） and high average transparency （〉80%） in the range of visible light and infrared and 30.5cm^2/（V · s） mobility were obtained for 1000nm thick ZnO film deposited on 6cm × 6cm glass substrate at a low temperature of 423K. PL spectra indicate that boron-doping improves the crystal quality, which explains why the ZnO：B films show a better electrical stability than the un-doped samples. Low-pressure annealing in H2 atmosphere at 473K of ZnO films effectively enhances the electron mobility. When applied in a-Si thin film solar cells as front electrodes,ZnO films present equivalent performance to Asahi-U type SnO2 films.

关 键 词：MOCVD 绒面ZnO薄膜 B掺杂 前电极 太阳电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动]