亲疏水处理度对于GaAs/GaN键合界面透光性的影响  

Effect of Hydrophilic and Hydrophobic Processes on the Transmittance of a GaAs/GaN Bonding Interface

作　　者：郭晶[1] 郭霞[1] 梁庭[1] 顾晓玲[1] 林巧明[1] 沈光地[1] 

机构地区：[1]北京工业大学电控学院北京市光电子技术实验室,北京100022

出　　处：《Journal of Semiconductors》2007年第7期1092-1096,共5页半导体学报（英文版）

基　　金：国家高技术研究发展计划(批准号:2006AA03A121);国家重点基础研究发展规划(批准号:2006CB604902);国家自然科学基金(批准号:60506012);霍英东基金(批准号:2003BA316A01-01-08);北京市人才强教计划(批准号:KZ200510005003;05002015200504);优秀博士论文基金(批准号:200542)资助项目~~

摘　　要：采用亲疏水两种不同的处理方法,在氮气保护、600℃热处理1h条件下,成功实现了GaN和GaAs异质材料的键合,两种处理方法均可满足器件对于键合强度及键合面积的要求.从亲疏水键合机理的不同出发,研究了两种处理方法对于界面透光性的影响,对键合样品进行了可见光透射谱测试,实验结果表明疏水键合界面对于垂直入射的630nm的光可以获得高达94.7%的透过率,并将键合样品加工成器件进行电致发光(EL)谱测试,实验结果与透射谱测试结果一致.Bonding of GaAs/GaN was successfully achieved at 600℃ in N2 atmosphere for 1h, with two different chemical pretreatments of hydrophilic and hydrophobic processes. Both methods can achieve high bonding strength and large bonding area. Based on the mechanics of the two different pretreatments, the transmittance of the bonding interface with different pretreatments was studied. Results of the transmission spectrum indicate that the hydrophobic process can yield a higher transmittance of 94.7% at 630nm. Devices were fabricated to execute the EL spectrum measurement,the results of which are consistent with the transmission spectrum.

关 键 词：键合 亲疏水处理 GaAs/GaN 透过率 

分 类 号：TN304[电子电信—物理电子学]