离子束刻蚀光导HgCdTe探测器芯片的温度限制  

Temperature Effect of Photoconductive HgCdTe Detector Chip Using Ion Beam Etching

作　　者：苏岗[1] 洪锦华[1] 吴思晋[1] 

机构地区：[1]昆明物理研究所

出　　处：《红外技术》1997年第4期25-26,24,共3页Infrared Technology

摘　　要：利用离子束对光导ＨｇＣｄＴｅ芯片阳极氧化膜、ＣｒΑＡｕ电极和ＨｇＣｄＴｅ芯片的成形进行刻蚀。Ion beam has been employed to etching the anodic oxide film,Cr Au film of photoconductive HgCdTe chip.Surface temperature of HgCdTe chip has been kept to be less than 80℃ in processing to meet the technology requirements.

关 键 词：光敏面 离子束刻蚀 红外探测器 碲镉汞芯片 

分 类 号：TN215.05[电子电信—物理电子学]