缓冲层对PMS-PNN-PZT压电厚膜材料性能的影响  

Effects of buffer layer on properties of PMS-PNN-PZT piezoelectric thick film material

作　　者：沈建兴[1] 李传山[1] 董金美[1] 张雷[1] 武红霞[1] 

机构地区：[1]山东轻工业学院材料科学与工程学院,山东济南250353

出　　处：《电子元件与材料》2007年第7期46-48,共3页Electronic Components And Materials

基　　金：济南市科学技术发展计划资助项目(046039)

摘　　要：采用丝网印刷的方法制备了PMS-PNN-PZT四元系压电厚膜陶瓷材料。研究了基板、下电极和PMS-PNN-PZT厚膜层三者之间的高温扩散作用,及SiO2缓冲层对PMS-PNN-PZT压电厚膜的压电性能以及显微结构的影响。用XRD和SEM分析材料的相组成、厚膜定位及压电层的显微结构。结果表明,缓冲层有效地阻止了三者之间的相互扩散,样品的d33、εr等都有所提高,所制得的压电厚膜d33为285pC/N,εr为1210,Qm为1330,kp为0.54。PMS-PNN-PZT piezoelectric thick film ceramic material was prepared by screen printing method, The high temperature diffusion among the substrate, below electrode and the PMS-PNN-PZTfilm was studied, Effects of SiO2 buffer on piezoelectric, dielectric properties and microstructure of PMS-PNN-PZT piezoelectric thick film were studied. Phase composition, thick film orientation and microstructure of piezoelectric layer were analysed by XRD and SEM. The results show that the diffusion among three layers are effectively prevented by the buffer, d33 and εr of sample are improved, the piezoelectric constant d33 is 285 pC/N, comparative dielectric constant εr is 1 210, mechanical quality factor Qm is 1 330, electromechanical coupling coefficient kp is 0.54.

关 键 词：无机非金属材料 PMS-PNN—PZT 压电厚膜 缓冲层 扩散 

分 类 号：TM282[一般工业技术—材料科学与工程]