ZnO紫外光电导型探测器的制备与研究  

The Fabrication and Study of ZnO Photoconductive UV Detector

作　　者：冯士维[1] 李瑛[1] 孙静莹[1] 谢雪松[1] 杨集[1] 张跃宗[1] 卢毅成 

机构地区：[1]北京工业大学电子信息与控制工程学院 [2]Department of Computer and Electrical Eng.,Rutgers University,NJ 08854,USA

出　　处：《北京工业大学学报》2007年第7期678-681,共4页Journal of Beijing University of Technology

基　　金：北京市优秀人才培养专项资费资助计划资助项目(67002013200302).

摘　　要：通过在MOCVD方法生长的ZnO薄膜上沉积Al/Au叉指状电极制得ZnO紫外光电导型探测器,对该探测器的欧姆接触特性、光电响应特性以及光谱响应特性进行了测试研究,并根据AES、XPS分析结果对测试结果进行了理论分析．结果表明,即使在未进行合金工艺的情况下,非合金Al/ZnO金属体系与n型ZnO也可以形成良好的欧姆接触,正向偏压下,探测器的暗电流与光电流随外加偏压线性增加;探测器对紫外光潜具有明显的响应,其响应截止波长为368nm．XPS分析表明,在ZnO薄膜表面存在着一定的O空位和Zn间隙,非化学计量的O与Zn之比对器件的响应时间有影响．A ZnO photoconductive UV detector is fabricated on ZnO film grown by MOCVD based on Al/Au interdigital electrode. Nonalloyed Al/Au metallization scheme forms good ohmic contact on n-type ZnO. The dark and photoilluminated currents increase linearly with bias voltage. The cutoff wavelength of the detector is 368 nm, and it is also in response to the blue and green light. XPS analysis shows that there are oxygen vacancy and zinc interstitial in the ZnO film, and the nonstoichiometric ZnO film has influence on the photoresponse time of the detector.

关 键 词：氧化锌 单品薄膜 紫外光探测器 

分 类 号：TN304.2[电子电信—物理电子学]