镱铒共掺Al_2O_3薄膜激光退火研究  

Investigation of Laser Annealing on Yb-Er Co-Doped Al_2O_3 Films

作　　者：李成仁[1] 宋世德[1] 周松强[1] 宋昌烈[1] 于清旭[1] 雷明凯[2] 

机构地区：[1]大连理工大学物理与光电工程学院 [2]大连理工大学材料科学与工程学院,大连116024

出　　处：《光学学报》2007年第7期1322-1326,共5页Acta Optica Sinica

基　　金：国家自然科学基金(60477023);辽宁省科技厅基金(20062137)资助课题

摘　　要：讨论了激光退火工艺参量对镱铒共掺Al2O3薄膜表面形貌和退火均匀性的影响。薄膜样品被置放于衰减扩束透镜的3倍焦距位置时,薄膜上8 mm半径区域内近似均匀退火;退火时间为32 s时,表面形貌与退火前基本相同。阈值退火功率为5 W,最佳退火功率为20 W。对相同工艺制备的镱铒共掺Al2O3薄膜分别进行CO2激光退火和热退火处理,光致发光(PL)谱测量表明,前者峰值强度比后者强10倍以上,并且热退火光致发光强度随抽运功率增加出现饱和、下降,而激光退火近似随抽运功率单调线性增强。The Yb-Er co-doped Al2O3 films were prepared by the microwave electron cyclotron resonance plasma source enhanced RF sputtering and annealed by CO2 laser. The influence on the surface morphology and the annealing uniformity of the films was discussed by adjusting different annealing parameters. The area within 8 mm radius was annealed uniformly when films were at treble focus of the attenuation lens. The morphology of films, whether annealed or non-annealed, has little difference if annealing time was selected less than 32 s. Furthermore, the photoluminescence characteristics of two kinds of films annealed by laser annealing and thermal annealing respectively were measured and compared. The results show that the photoluminescence （PL） peak intensity of the films annealed by laser is decuple more than that of the films annealed by thermal method, and the photoluminescence peak intensity of the latter appears saturated, even descent while the pump power goes on. The photoluminescence peak intensity of the former, however, increases monotonously with approximate linearity. The threshold annealing power is 5 W and the optimum annealing power is 20 W.

关 键 词：薄膜光学 镱铒共掺Al2O3薄膜 激光退火 表面形貌 退火均匀性 

分 类 号：O484.4[理学—固体物理] O433.1[理学—物理]