对靶磁控溅射制备VO_x薄膜及其退火研究  

Preparation of VO_x thin films by facing targets magnetron sputtering and study on anneailng of films

作　　者：韩雷[1] 胡明[1] 吕宇强[1] 梁继然[1] 刘志刚[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《传感器与微系统》2007年第7期54-57,共4页Transducer and Microsystem Technologies

基　　金：天津市自然科学基金资助项目(043600811)

摘　　要：利用对靶磁控溅射法在玻璃基片上制备VOx薄膜,采用正交实验方法研究了镀膜条件对VOx薄膜电阻温度系数(TCR)的影响,得到优化的镀膜工艺参数,主要包括Ar∶O2为48∶0.4、工作压力恒定为2 Pa、基底的温度为室温27℃、溅射功率保持在180W,在此基础上,进行不同温度条件的真空退火,得到薄膜TCR在-2.5%^-4.5%范围。利用原子力显微镜(AFM)和X射线光电子能谱法(XPS)分析了退火对提高薄膜TCR的作用,并找出VOx薄膜阻值与TCR的优化组合。同时,还观察到薄膜表面形貌的变化以及退火后薄膜中VO2,V2O3,V2O5的比例变化情况,并对其机理进行解释。Vanadium oxide thin films deposited on slide glass substrates are prepared by facing-target magnetron sputtering. The effect of sputtering conditions on temperature coefficient of resistance （TCR） is analyzed by orthogonal experiment ,and the optimum process recipes are achieved, including Ar：O2 =48： 0.4, gas pressure is 2 Pa, substrate temperature is 27 ℃, sputtering power is 180 W. The TCR is improved to -2.5 % -4.5 % after anneal at different temperature. The effect of anneal on TCR is analyzed by means of combined use of atomic force microscopes （AFM） and X-ray photoelectron spectroscopy （XPS） technique, while choosing the optimal combination of the resistance and TCR. The proportion changing of VO2, V2O3 and V2O5 and the surface transformation of the films after anneal are observed and explained.

关 键 词：氧化钒 薄膜 磁控溅射 退火 电阻温度系数 

分 类 号：TB43[一般工业技术]