巴基管涂层金刚石薄膜的成核率与生长速率研究  

Investigation of Nucleation and Growth Rate of Diamond Film on Buckytube Coating

作　　者：曹安源[1] 曾效舒[1] 刘玉东 高志栋[1] 梁吉[1] 魏秉庆[1] 吴德海[1] 

机构地区：[1]清华大学机械工程系

出　　处：《人工晶体学报》1997年第1期68-71,共4页Journal of Synthetic Crystals

摘　　要：本文对热丝ＣＶＤ法沉积金刚石的形成过程进行了研究，建立了以巴基管为涂层在硅片上沉积金刚石薄膜的成核率以及生长速率随时间的变化曲线。由此得出金刚石晶粒的成核经历孕育期、快速增长期和饱和期这三个连续的阶段。Diamond forming process using hot filament CVD method is investigated.The function relationship between rate of diamond nucleation and later growth on silicon wafer with buckytube coating and deposition time under certain engineering conditions has been established.The experiment result show that nucleation process is comprised of three consecutive stages (inoculation,fast growth and saturation).Later film growth rate is approximately a constant value.

关 键 词：布基管 热丝法 成核速率 金刚石薄膜 薄膜生长 

分 类 号：O484.1[理学—固体物理]