反应溅射法连续制备CeO_2隔离层  

CONTINUOUS DEPOSITION OF CeO_2 BUFFER LAYERS BY REACTIVE SPUTTERING

作　　者：张华[1] 刘慧舟[1] 杨坚[1] 金薇[1] 杨玉卫[1] 古宏伟[1] 

机构地区：[1]北京有色金属研究总院超导材料研究中心,北京100088

出　　处：《低温物理学报》2007年第3期218-220,共3页Low Temperature Physical Letters

基　　金：国家973计划(项目编号:2006CB601005);863计划(项目编号:2006AA03Z205)资助的课题~~

摘　　要：用带有反应溅射装置的走带系统在立方织构的Ni-5%W衬底上连续制备了长10cm的CeO2隔离层.为避免金属衬底氧化,以H2O作为反应气体.论文主要研究了衬底温度、走带速率对CeO2隔离层外延生长的影响.用X射线θ~2θ扫描,φ扫描对薄膜的取向和织构进行表征.结果显示在温度650℃,走带速度2.5mm/s的条件下,连续制备的CeO2隔离层有效地继承并改善了基底的织构,平均平面内φ扫描半高宽为6.18°,扫描电镜（SEM）观察表明薄膜表面致密,且无裂纹生成.A reel to reel reactive sputtering system has been developed to continuously deposit 10 cm long CeO2 buffer layers on biaxially textured Ni-5% W tapes. H20 was used as reactive gas during the sputtering process to form CeO2 and inhibit the formation of NiO. The growth conditions, such as substrate temperature and moving speed of tapes had been investigated. X-ray θ - 2θ scan, φ-scan were used to observe the in-plane alignment of the buffer layer. It has been found the CeO2 film has effectively inherited and improved the texture of the NiW substrate, the average φ-scan FWHM （ Full Width High Maximum） value is 6. 18°. Furthermore, results of SEM （Scanning electron microscopy） revealed a dense and crack-free CeO2 surface morphology.

关 键 词：反应溅射 连续沉积 CeO隔离层 NiW衬底 

分 类 号：O511.3[一般工业技术—材料科学与工程]