电子能量损失谱对碳化硅颗粒增强铝基复合材料界面特征的研究  

The EELS Investigation of Silicon Carbide Particulate Reinforced Aluminum Matrix Composite′s Interface Characteristics

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作  者:梅志[1] 顾明元[1] 蒋为吉[1] 吴人洁[1] 

机构地区:[1]上海交通大学金属基复合材料国家重点实验室

出  处:《电子显微学报》1997年第2期120-123,共4页Journal of Chinese Electron Microscopy Society

基  金:国家自然科学基金

摘  要:本文利用电子能量损失谱研究了氧化态和原始态碳化硅颗粒增强铝基复合材料的界面特征,讨论了它对复合材料弯曲强度的影响。结果发现,氧化处理后碳化硅与铝基体界面上有一SiO2非晶层,该非晶层内由于铝的扩散作用而形成铝的浓度梯度。原始态碳化硅与铝的界面上则无此非晶层。由于此非晶层的作用。Interface characteristics of as received and oxidized silicon carbide particulate reinforced aluminum matrix composite materials were studied by means of electron energy loss spectroscopy,and the effect of their interface structures on the flexural strength of the composites were discussed.It was found that there was an amorphous silicon dioxide layer at the interface between the oxidized silicon carbide and the aluminum matrix.Because of the diffusion of aluminum there was a gradient of aluminum across the amorphous layer.No amorphous layer was found at the interface between the as received silicon carbide particulate and the aluminum matrix.As the amorphous layer interacted with aluminum matrix,the interfacial bonding was strengthened and the flexural strength of the composite was increased.

关 键 词:电子能量损失谱 碳化硅  界面特征 复合材料 

分 类 号:TB331[一般工业技术—材料科学与工程]

 

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