镓铝双质掺杂在制造快速晶闸管中的应用研究  

Research of the Ga and Al double-impurity doping technique for making fast switching thyristor

作　　者：王公堂[1] 刘秀喜[1] 

机构地区：[1]山东师范大学物理与电子科学学院,济南250014

出　　处：《物理学报》2007年第8期4823-4828,共6页Acta Physica Sinica

基　　金：山东省自然科学基金(批准号:Y2003A01)资助的课题.~~

摘　　要：采用开管式Al乳胶源涂布与气相Ga相结合的技术,实现了镓铝双质在n型Si中的均匀掺杂,得到了p型半导体.研究了镓铝双质掺杂的方法及其与器件性能的关系,并讨论了机理.利用扩展电阻法、四探针和晶闸管测试仪等手段,测试了镓铝扩散Si片的杂质分布规律、薄层电阻RS及快速晶闸管的多项参数.利用该技术制造的快速晶闸管的关断时间toff为31.2—38.6μs,开通时间ton为4.6—5.9μs,通态峰值压降VTM为1.9—2.1V.实验和试用表明,该掺杂技术能明显提高器件的综合性能、电参数一致性和成品率,为制造快速晶闸管提供了一种可行的受主双质掺杂新工艺.We describe a novel technique for producing the p-type semiconductor. The homogeneous impurity doping of Ga and AI in the n-type silicon wafer is achieved by means of the combination of two technical processes namely aluminum emulsion coating and vaporizing Ga. This Ga-A1 double-impurity doping technique, as well as its effect on the quality of the produced semiconductor devices, is investigated theoretically and tested in practice. The principle of the doping technique is also discussed in detail. By using SRP, four-probe needle and thyristor analyzer, we have examined the Ga-A1 impurity concentration distribution within the silicon wafer, thin layer resistance RS, and other useful parameters of the fast switching thyristors made by this technique. The turn-off time of the fast switching thyristors, toff is 31.2-38.6 μs, turn-on time ton is 4.6-5.9 μs, and the forward voltage drop VTM measured is 1.9-2.1 V. Both experiment and some real applications indicated that this technique may obviously improve the semiconductor device in the overall performance, the electrical parameter uniformity and the end product rate. It provides a feasible technique for making fast switching thyristors.

关 键 词：快速晶闸管 镓铝双质掺杂技术 杂质浓度分布 

分 类 号：TN34[电子电信—物理电子学]