BiVO_4对MgTiO_3陶瓷烧结及介电性能的影响  

Effect of BiVO_4 on the Sintering and Dielectric Properties of MgTiO_3 Ceramics

作　　者：张启龙[1] 童建喜[1] 杨辉[1] 王焕平[1] 

机构地区：[1]浙江大学材料与化学工程学院,浙江杭州310027

出　　处：《压电与声光》2007年第4期432-434,共3页Piezoelectrics & Acoustooptics

基　　金：浙江省重点科技计划基金资助项目(2005C21038)

摘　　要：研究了BiVO4对MgTiO3介质陶瓷烧结特性、相组成和介电性能的影响。结果表明,BiVO4能有效促使MgTiO3陶瓷烧结温度从1 400℃降至900℃以下。X-射线衍射(XRD)表明BiVO4相和MgTiO3相共存。随着BiVO4含量增大,陶瓷致密化温度降低,体积密度和介电常数rε逐渐增大,品质因数Q×f急剧下降,频率温度系数fτ向负值方向移动。添加w(MgTiO3)=4%的陶瓷在900℃烧结2 h,获得最佳性能:rε=18.53,Q×f=6 832 GHz,fτ=-55×10-6/℃。The effects of BiVO4 additions on the microstructure, phases constitute and the microwave dielectric properties of MgTiO3 ceramics were investigated systematically. The sintering temperature of MgTiO3 ceramics with BiVO4 additions can be effectively reduced from 1 400 ℃ to 900 ℃. It was found that the phases BiVO4 and MgTiO3 could be coexisted as observed by XRD. With increasing BiVO4 addition, the sintering temperature was reduced, the bulk density and dielectric constant （εr） gradually increased, the quality factor （Q× f） seriously decreased and the temperature coefficient of resonant frequency （τf） shifted to a negative value. The dielectric properties （εr, Q× f, τf） of MgTiO3 ceramics with w（MgTiO3 ）= 4% additions sintered at 900 ℃ for 2 h were 18.53, 6 832 GHz, -55 ×10^-6/℃.

关 键 词：低温共烧陶瓷 介电性能 BIVO4 MGTIO3 

分 类 号：TQ174[化学工程—陶瓷工业]